1 of 2 af2301p features - advanced trench process technology - high density cell design for ultra low on-resistance - excellent thermal and electrical capabilities - compact and low profile sot-23 package pin assignments 3 2 1 (top view) 1. g 2. s 3. d product summary v ds = - 20v r ds (on) , v gs @-4.5v, i ds @-2.8a =130m ? . r ds (on) , v gs @-2.5v, i ds @-2.0a =190m ? . pin descriptions pin no. pin name description 1 g gate 2 s source 3 d drain ordering information ax 2301p x x x pn package feature f :mosfet w: sot23 lead free blank : normal l : lead free package packing blank : tube or bulk a : tape & reel block diagram s g d smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
absolute maxi mum ratings (t a =25oc unless otherwise noted) symbol parameter rating units v ds drain-source voltage -20 v v gs gate-source voltage 8 v i d continuous drain current -2.3 a i dm pulsed drain current -10 a t a =25oc 1.25 p d maximum power dissipation t a =70oc 0.8 w t j operating junction temperature +150 oc t j , t stg operating junction and storage temperature range -55 to +150 oc thermal performance symbol parameter limit units t l lead temperature (1/8? from case) 5 s r ja junction to ambient thermal resistance (pcb mounted) 100 oc/w note: surface mounted on fr4 board t < 5 sec. electrical characteristics rate i d =-2.3a, (t a =25 o c unless otherwise noted) limits symbol parameter test conditions min. typ. max. unit static bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v v gs =-4.5v, i d =-2.8a - 95 130 r ds(on) drain-source on-state resistance v gs =-2.5v, i d =-2.0a - 122 190 m ? v gs(th) gate threshold voltage v ds = v gs , i d =-250ua -0.45 - - v i dss zero gate voltage drain current v ds =-16v, v gs =0v - - -1.0 ua i gss gate body leakage v gs =8v, v ds =0v - - 100 na i d(on) on-state drain current v ds =-5v, v gs =-10v -6 - - a g fs forward tranconductance v ds =-5v, i d =-2.8a - 6.5 - s dynamic q g total gate charge - 5.4 10 q gs gate-source charge - 0.8 - q gd gate-drain charge v ds =-6v, i d =-2.8a, v gs =-4.5v - 1.1 - nc t d(on) turn-on delay time - 5 25 t r turn-on rise time - 19 60 t d(off) turn-off delay time - 95 110 t f turn-off fall-time v dd =-6v, r l =6 ? , i d =-1a, v gen =-4.5v, r g =6 ? - 65 80 ns c iss input capacitance - 447 - c oss output capacitance - 127 - c rss reverse transfer capacitance v ds =-6v, v gs =0v, f=1.0mhz - 80 - pf source-drain diode i s max. diode forward current - - -1.6 a v sd diode forward voltage i s =-1.6a, v gs =0v - -0.8 -1.2 v note: pulse test: pulse width < 300us, duty cycle < 2% 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com af2301p smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
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